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      Rapid isothermal processing

      Journal of Applied Physics
      AIP Publishing

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          The effects of water on oxide and interface trapped charge generation in thermal SiO2films

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            Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model

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              Limited reaction processing: Silicon epitaxy

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                April 15 1988
                April 15 1988
                : 63
                : 8
                : R59-R114
                Article
                10.1063/1.340176
                757bb356-d5b2-4c15-8e86-322b61978ed3
                © 1988
                History

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