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      Point defects in Ga 2O 3

      Author(s): 1
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          A review of Ga2O3 materials, processing, and devices

          S Pearton, Jiancheng Yang, Michael Mastro … (2018)
          Article 0 comments Cited 268 times – based on 0 reviews     Review now
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            Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

            Kohei Sasaki, Takekazu Masui, Shigenobu Yamakoshi … (2012)
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              Oxygen vacancies and donor impurities in β-Ga2O3

              C. Van de Walle, A. Janotti, J Weber … (2010)
              Article 0 comments Cited 187 times – based on 0 reviews     Review now
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                Author and article information

                Contributors
                Matthew D. McCluskey: (View ORCID Profile)
                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: March 14 2020
                Publication date (Print): March 14 2020
                Volume: 127
                Issue: 10
                Page: 101101
                Affiliations
                [1 ]Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814, USA
                Article
                DOI: 10.1063/1.5142195
                SO-VID: 77b5dde4-6652-4ee8-b149-e0627fee0221
                Copyright © © 2020
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                https://publishing.aip.org/authors/rights-and-permissions

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