Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations

Ahn, H.; Gwo, S.; Wu, C. L.; Shen, C.-H.

doi:10.1063/1.1929097

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Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations

Author(s): H. Ahn , C.-H. Shen , C. -L. Wu , S. Gwo

Publication date Created: May 16 2005

Publication date (Print): May 16 2005

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

H Harima, J. Furthm�ller, A.V. Mudryi … (2002)

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Indium nitride (InN): A review on growth, characterization, and properties

Ashraful Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (2003)

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Optical bandgap energy of wurtzite InN

Hiroshi Harima, Masashi Nakao, Takashi Matsuoka … (2002)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: May 16 2005

Publication date (Print): May 16 2005

Volume: 86

Issue: 20

Page: 201905

Article

DOI: 10.1063/1.1929097

SO-VID: 7c585d74-2391-4086-b885-ea26e1378323

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Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations

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NTT Journal for Theology and the Study of Religion

Most cited references 14

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

Indium nitride (InN): A review on growth, characterization, and properties

Optical bandgap energy of wurtzite InN

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