In-polar InN grown by plasma-assisted molecular beam epitaxy

Speck, James S.; Wraback, Michael; Koblmüller, Gregor; Gallinat, Chad S.; Readinger, Eric D.; Shen, Hongen; Chern, Grace D.; Brown, Jay S.; Bernardis, Sarah

doi:10.1063/1.2234274

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In-polar InN grown by plasma-assisted molecular beam epitaxy

Author(s): Chad S. Gallinat , Gregor Koblmüller , Jay S. Brown , Sarah Bernardis , James S. Speck , Grace D. Chern , Eric D. Readinger , Hongen Shen , Michael Wraback

Publication date Created: July 17 2006

Publication date (Print): July 17 2006

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

B. Heying, J. S. Speck, E Haus … (2000)

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Surface charge accumulation of InN films grown by molecular-beam epitaxy

William Schaff, Hai Lu, Lester F. Eastman … (2003)

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Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials

D. Vogel, P. Krüger, C Stampfl … (2000)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: July 17 2006

Publication date (Print): July 17 2006

Volume: 89

Issue: 3

Page: 032109

Article

DOI: 10.1063/1.2234274

SO-VID: 2ab06e61-89d0-4798-87e0-dc9a2888bcb3

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In-polar InN grown by plasma-assisted molecular beam epitaxy

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IODP Expedition 400: NW Greenland Glaciated Margin

Most cited references 20

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

Surface charge accumulation of InN films grown by molecular-beam epitaxy

Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials

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