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      Optical logic operation via plasmon-exciton interconversion in 2D semiconductors

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          Abstract

          Nanophotonic devices manipulating light for high-speed computing are a counterpart of speed-limited electronic circuits. Although plasmonic circuits are a promising platform for subwavelength miniaturization, the logic-operation principle is still limited to mimicking those of photonic waveguides using phase shifts, polarization, interference, and resonance. Meanwhile, reconfigurable interconversion between exciton and plasmon engender emerging applications like exciton transistors and multiplexers, exciton amplifiers, chiral valleytronics, and nonlinear excitonics. Here, we propose optical logic principles realized by exciton-plasmon interconversion in Ag-nanowires (NW) overlapped on transition metal dichalcogenides (TMDs) monolayers. Excitons generated from TMDs couple to the Ag-NW plasmons, eventually collected as output signals at the Ag-NW end. Using two lasers, we demonstrate AND gate by modulating single excitons in Ag-NW on MoS 2 and a half-adder by modulating dual excitons in lateral WSe 2 and WS 2. Moreover, a 4-to-2 binary encoder is realized in partially overlapped MoSe 2 and MoS 2 using four-terminal laser inputs. Our results represent great advances in communication processing for optical photonics integrable with subwavelength architectures.

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          High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.

          The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers, provide ideal semiconducting materials with high electrical carrier mobility, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect, bandgap modulation, indirect-to-direct bandgap transition, piezoelectricity and valleytronics. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal-organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30 cm(2) V(-1) s(-1) at room temperature and 114 cm(2) V(-1) s(-1) at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three-dimensional circuitry. Our work is a step towards the realization of atomically thin integrated circuitry.
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            Generation of single optical plasmons in metallic nanowires coupled to quantum dots.

            Control over the interaction between single photons and individual optical emitters is an outstanding problem in quantum science and engineering. It is of interest for ultimate control over light quanta, as well as for potential applications such as efficient photon collection, single-photon switching and transistors, and long-range optical coupling of quantum bits. Recently, substantial advances have been made towards these goals, based on modifying photon fields around an emitter using high-finesse optical cavities. Here we demonstrate a cavity-free, broadband approach for engineering photon-emitter interactions via subwavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot is optically excited in close proximity to a silver nanowire, emission from the quantum dot couples directly to guided surface plasmons in the nanowire, causing the wire's ends to light up. Non-classical photon correlations between the emission from the quantum dot and the ends of the nanowire demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that efficient coupling is accompanied by more than 2.5-fold enhancement of the quantum dot spontaneous emission, in good agreement with theoretical predictions.
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              A library of atomically thin metal chalcogenides

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                Author and article information

                Contributors
                hsl@chungbuk.ac.kr
                leeyoung@skku.edu
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                24 June 2019
                24 June 2019
                2019
                : 9
                : 9164
                Affiliations
                [1 ]ISNI 0000 0001 2181 989X, GRID grid.264381.a, Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), , Sungkyunkwan University, ; Suwon, 16419 Republic of Korea
                [2 ]ISNI 0000 0001 2181 989X, GRID grid.264381.a, Department of Energy Science, , Sungkyunkwan University, ; Suwon, 16419 Republic of Korea
                [3 ]ISNI 0000 0000 9611 0917, GRID grid.254229.a, Department of Physics, , Chungbuk National University, ; Cheongju, 28644 Republic of Korea
                Author information
                http://orcid.org/0000-0002-6669-5883
                http://orcid.org/0000-0001-7403-8157
                Article
                45204
                10.1038/s41598-019-45204-0
                6591228
                31235812
                7f1d7741-1fba-4e40-92d6-2f9fd61a3735
                © The Author(s) 2019

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 18 March 2019
                : 28 May 2019
                Funding
                Funded by: FundRef https://doi.org/10.13039/501100003725, National Research Foundation of Korea (NRF);
                Award ID: 2018R1D1A1A02046206
                Award ID: 2018R1D1A1A02046206
                Award ID: 2018R1D1A1A02046206
                Award ID: 2018R1D1A1A02046206
                Award ID: 2018R1D1A1A02046206
                Award ID: 2018R1D1A1A02046206
                Award ID: 2018R1D1A1A02046206
                Award Recipient :
                Categories
                Article
                Custom metadata
                © The Author(s) 2019

                Uncategorized
                two-dimensional materials,nanophotonics and plasmonics,nanowires
                Uncategorized
                two-dimensional materials, nanophotonics and plasmonics, nanowires

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