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      Application of Plasma-Doping (PLAD) Technique to Reduce Dark Current of CMOS Image Sensors

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          Journal
          Title: IEEE Electron Device Letters
          Abbreviated Title: IEEE Electron Device Lett.
          Publisher: Institute of Electrical and Electronics Engineers (IEEE)
          ISSN (Print): 0741-3106
          Publication date Created: February 2007
          Publication date (Print): February 2007
          Volume: 28
          Issue: 2
          Pages: 114-116
          Article
          DOI: 10.1109/LED.2006.889241
          SO-VID: 7f48a1ff-9d1e-4f73-861d-72b2552fdef0
          Copyright © © 2007
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