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      Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

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          Abstract

          We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC) thin films on silicon substrates by using graphene–graphitic carbon nanoflakes (GGNs) templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD). The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM). Long and straight SiC nanograins with hexagonal shapes, and with lateral sizes of around 200–400 nm are synthesized on the GGNs, which form compact SiC thin films.

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          Electric Field Effect in Atomically Thin Carbon Films

          S. Morozov, K. S. Novoselov, A. K. Geim … (2007)
          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            The Raman Fingerprint of Graphene

            A. K. Geim, A. C. Ferrari, J C Meyer … (2006)
            Graphene is the two-dimensional (2d) building block for carbon allotropes of every other dimensionality. It can be stacked into 3d graphite, rolled into 1d nanotubes, or wrapped into 0d fullerenes. Its recent discovery in free state has finally provided the possibility to study experimentally its electronic and phonon properties. Here we show that graphene's electronic structure is uniquely captured in its Raman spectrum that clearly evolves with increasing number of layers. Raman fingerprints for single-, bi- and few-layer graphene reflect changes in the electronic structure and electron-phonon interactions and allow unambiguous, high-throughput, non-destructive identification of graphene layers, which is critically lacking in this emerging research area.
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              Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

              J. Anthony Powell, Herbert A. Will, Shigehiro Nishino (1983)
              Article 0 comments Cited 172 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (nlm-ta): Materials (Basel)
                Journal ID (iso-abbrev): Materials (Basel)
                Journal ID (publisher-id): materials
                Title: Materials
                Publisher: MDPI
                ISSN (Electronic): 1996-1944
                Publication date (Electronic): 16 April 2013
                Publication date Collection: April 2013
                Volume: 6
                Issue: 4
                Pages: 1543-1553
                Affiliations
                [1 ]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; E-Mails: gshsun@ 123456red.semi.ac.cn (G.S.); liubin2010@ 123456semi.ac.cn (B.L.); ggyan@ 123456semi.ac.cn (G.Y.); guanmin@ 123456red.semi.ac.cn (M.G.); zhang_yang@ 123456mail.semi.ac.cn (Y.Z.); fzhang@ 123456semi.ac.cn (F.Z.); donglin09@ 123456semi.ac.cn (L.D.); liuero@ 123456semi.ac.cn (L.Z.); liushengbei@ 123456semi.ac.cn (S.L.); tianlixin@ 123456semi.ac.cn (L.T.); wangl@ 123456semi.ac.cn (L.W.); zwshuke@ 123456semi.ac.cn (W.Z.); ypzeng@ 123456red.semi.ac.cn (Y.Z.)
                [2 ]Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; E-Mail: chenyu@ 123456semi.ac.cn
                Author notes
                [* ]Author to whom correspondence should be addressed; E-Mails: liuxf@ 123456mail.semi.ac.cn (X.L.); chenyu@ 123456semi.ac.cn (Y.C.); Tel.: +86-10-8230-4101+86-10-8230-4783 (Y.C.); Fax: +86-10-8230-4232 (X.L. and Y.C.).
                Article
                Publisher ID: materials-06-01543
                DOI: 10.3390/ma6041543
                PMC ID: 5452306
                SO-VID: 8006067d-4ef8-4447-ad0a-35a4074c007d
                Copyright © © 2013 by the authors.
                License:

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license ( http://creativecommons.org/licenses/by/3.0/).

                History
                Date received : 22 January 2013
                Date revision received : 28 February 2013
                Date accepted : 14 March 2013
                Categories
                Subject: Article

                Keywords: hexagonal columnar,silicon carbide,thin film,graphene,nanoflake,solid carbon,cvd
                Data availability:
                Keywords: hexagonal columnar, silicon carbide, thin film, graphene, nanoflake, solid carbon, cvd

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