Current-driven magnetization switching in ferromagnetic bulk Rashba semiconductor (Ge,Mn)Te

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Abstract

Current-driven switching of ferromagnetism is observed in a bulk material with Rashba-type spin-polarized band.

Abstract

Multiferroic materials with both ferroelectric and ferromagnetic orders provide a promising arena for the electrical manipulation of magnetization through the mutual correlation between those ferroic orders. Such a concept of multiferroics may expand to semiconductor with both broken symmetries of spatial inversion and time reversal, that is, polar ferromagnetic semiconductors. Here, we report the observation of current-driven magnetization switching in one such example, (Ge,Mn)Te thin films. The ferromagnetism caused by Mn doping opens an exchange gap in original massless Dirac band of the polar semiconductor GeTe with Rashba-type spin-split bands. The anomalous Hall conductivity is enhanced with increasing hole carrier density, indicating that the contribution of the Berry phase is maximized as the Fermi level approaches the exchange gap. By means of pulse-current injection, the electrical switching of the magnetization is observed in the (Ge,Mn)Te thin films as thick as 200 nm, pointing to the Rashba-Edelstein effect of bulk origin. The efficiency of this effect strongly depends on the Fermi-level position owing to the efficient spin accumulation at around the gap. The magnetic bulk Rashba system will be a promising platform for exploring the functional correlations among electric polarization, magnetization, and current.

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Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

Cui-Zu Chang, Jinsong Zhang, Xiao Dong Feng … (2016)

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

H. Ohno, A Shen, F Matsukura … (1996)

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Topological Field Theory of Time-Reversal Invariant Insulators

Xiao-Liang Qi, Shou-Cheng Zhang, Taylor Hughes (2008)

We show that the fundamental time reversal invariant (TRI) insulator exists in 4+1 dimensions, where the effective field theory is described by the 4+1 dimensional Chern-Simons theory and the topological properties of the electronic structure is classified by the second Chern number. These topological properties are the natural generalizations of the time reversal breaking (TRB) quantum Hall insulator in 2+1 dimensions. The TRI quantum spin Hall insulator in 2+1 dimensions and the topological insulator in 3+1 dimension can be obtained as descendants from the fundamental TRI insulator in 4+1 dimensions through a dimensional reduction procedure. The effective topological field theory, and the \(Z_2\) topological classification for the TRI insulators in 2+1 and 3+1 dimensions are naturally obtained from this procedure. All physically measurable topological response functions of the TRI insulators are completely described by the effective topological field theory. Our effective topological field theory predicts a number of novel and measurable phenomena, the most striking of which is the topological magneto-electric effect, where an electric field generates a magnetic field in the same direction, with an universal constant of proportionality quantized in odd multiples of the fine structure constant \(\alpha=e^2/\hbar c\). Finally, we present a general classification of all topological insulators in various dimensions, and describe them in terms of a unified topological Chern-Simons field theory in phase space.

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Author and article information

Journal

Journal ID (nlm-ta): Sci Adv

Journal ID (iso-abbrev): Sci Adv

Journal ID (publisher-id): SciAdv

Journal ID (hwp): advances

Title: Science Advances

Publisher: American Association for the Advancement of Science

ISSN (Electronic): 2375-2548

Publication date Collection: December 2018

Publication date (Electronic): 07 December 2018

Volume: 4

Issue: 12

Electronic Location Identifier: eaat9989

Affiliations

[1 ]RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.

[2 ]Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan.

[3 ]Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

[4 ]PRESTO, Japan Science and Technology Agency, Chiyoda-ku, Tokyo 102-0075, Japan.

Author notes

[* ]Corresponding author. Email: ryutaro.yoshimi@ 123456riken.jp

Author information

R. Yoshimi http://orcid.org/0000-0001-6200-9375

K. Yasuda http://orcid.org/0000-0003-4894-0205

K. S. Takahashi http://orcid.org/0000-0001-5996-8532

Y. Tokura http://orcid.org/0000-0002-2732-4983

Article

Publisher ID: aat9989

DOI: 10.1126/sciadv.aat9989

PMC ID: 6286171

PubMed ID: 30539144

SO-VID: 8d34d8cb-d2c2-4120-9c01-f008d31ef46e

Copyright © Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.