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      Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

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          In-memory computing with resistive switching devices

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            Memristive crossbar arrays for brain-inspired computing

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              Memory leads the way to better computing.

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                Author and article information

                Contributors
                Journal
                physica status solidi (RRL) – Rapid Research Letters
                Phys. Status Solidi RRL
                Wiley
                1862-6254
                1862-6270
                June 2021
                April 04 2021
                June 2021
                : 15
                : 6
                : 2100084
                Affiliations
                [1 ]Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China
                [2 ]State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences Shanghai 200050 China
                [3 ]University of Chinese Academy of Sciences Beijing 100029 China
                [4 ]Department of Precision Instrument Tsinghua University Beijing 100084 China
                [5 ]Frontier Institute of Chip and System Fudan University Shanghai 200433 China
                Article
                10.1002/pssr.202100084
                8e06a9ba-baa6-4847-add9-1784beccdb5d
                © 2021

                http://onlinelibrary.wiley.com/termsAndConditions#vor

                http://doi.wiley.com/10.1002/tdm_license_1.1

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