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      Enhanced Sol–Gel Route to Obtain a Highly Transparent and Conductive Aluminum-Doped Zinc Oxide Thin Film

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          Abstract

          The electrical and optical properties of sol–gel derived aluminum-doped zinc oxide thin films containing 2 at.% Al were investigated considering the modifying effects of (1) increasing the sol H 2O content and (2) a thermal treatment procedure with a high-temperature approach followed by an additional heat-treatment step under a reducing atmosphere. According to the results obtained via the TG-DTA analysis, FT-IR spectroscopy, X-ray diffraction technique, and four-point probe resistivity measurements, it is argued that in the modified sample, the sol hydrolysis, decomposition of the deposited gel, and crystallization of grains result in grains of larger crystallite size in the range of 20 to 30 nm and a stronger c-axis preferred orientation with slightly less microstrain. The obtained morphology and grain-boundary characteristics result in improved conductivity considering the resistivity value below 6 mΩ·cm. A detailed investigation of the samples’ optical properties, in terms of analyzing their absorption and dispersion behaviors through UV-Vis-NIR spectroscopy, support our reasoning for the increase of the mobility, and to a lesser extent the concentration of charge carriers, while causing only a slight degradation of optical transmittance down to nearly 80%. Hence, an enhanced performance as a transparent conducting film is claimed for the modified sample by comparing the figure-of-merit values.

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          The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids

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            The electrical properties of polycrystalline silicon films

            John Seto (1975)
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              Hydrogen as a cause of doping in zinc oxide

              Zinc oxide, a wide-band-gap semiconductor with many technological applications, typically exhibits n-type conductivity. The cause of this conductivity has been widely debated. A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor. This behavior is unexpected and very different from hydrogen's role in other semiconductors, in which it acts only as a compensating center and always counteracts the prevailing conductivity. These insights have important consequences for control and utilization of hydrogen in oxides in general.
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                Author and article information

                Journal
                Materials (Basel)
                Materials (Basel)
                materials
                Materials
                MDPI
                1996-1944
                29 May 2019
                June 2019
                : 12
                : 11
                : 1744
                Affiliations
                Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento, Italy; riccardo.ceccato@ 123456unitn.it
                Author notes
                [* ]Correspondence: mohammadhosein.nateq@ 123456unitn.it ; Tel.: +39-391-311-3046
                Author information
                https://orcid.org/0000-0001-7281-0449
                Article
                materials-12-01744
                10.3390/ma12111744
                6600773
                31146384
                9225541c-c30f-4fae-a81f-7a0632217330
                © 2019 by the authors.

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                : 30 April 2019
                : 23 May 2019
                Categories
                Article

                sol–gel,al-doped zno,hydrolysis,thin film,transparent conductors,resistivity,uv-vis-nir spectroscopy,figure of merit

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