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      Misfit dislocation dynamics in Si1−xGex/(100) Si: Uncapped alloy layers, buried strained layers, and multiple quantum wells

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      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

          T. B. Light, S. Mader, J. Matthews (1970)
          Article 0 comments Cited 171 times – based on 0 reviews     Review now
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            Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

            S. Tiwari, G.L. Patton, J.M.C. Stork … (1988)
            Article 0 comments Cited 68 times – based on 0 reviews     Review now
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              Excess stress and the stability of strained heterostructures

              B. W. Dodson, J Tsao (1988)
              Article 0 comments Cited 49 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: October 1990
                Publication date (Print): October 1990
                Volume: 57
                Issue: 14
                Pages: 1434-1436
                Article
                DOI: 10.1063/1.103457
                SO-VID: 930689c3-3e7a-4db9-a0de-5aa081f58a90
                Copyright © © 1990
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