Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H2 discharges

Strahm, B; Howling, A. A.; Sansonnens, L; Hollenstein, Ch.

doi:10.1088/0963-0252/16/1/011

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Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H2 discharges

Author(s): B Strahm , A A Howling , L Sansonnens , Ch Hollenstein

Publication date Created: February 01 2007

Publication date (Print): February 01 2007

Journal: Plasma Sources Science and Technology

Publisher: IOP Publishing

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Most cited references 30

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A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon

Mark Kushner (1988)

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Critical volume fraction of crystallinity for conductivity percolation in phosphorus‐doped Si:F:H alloys

R. Tsu, K Tanaka, S. C. Lee … (1982)

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Complete microcrystallinep‐i‐nsolar cell—Crystalline or amorphous cell behavior?

R Flückiger, A. Shah, H. Keppner … (1994)

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Journal

Title: Plasma Sources Science and Technology

Abbreviated Title: Plasma Sources Sci. Technol.

Publisher: IOP Publishing

ISSN (Print): 0963-0252

ISSN (Electronic): 1361-6595

Publication date Created: February 01 2007

Publication date (Print): February 01 2007

Volume: 16

Issue: 1

Pages: 80-89

Article

DOI: 10.1088/0963-0252/16/1/011

SO-VID: 943e545b-653f-47ec-8bff-2545685c69c5

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Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H2 discharges

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Silicon thin film solar cells

Most cited references 30

A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon

Critical volume fraction of crystallinity for conductivity percolation in phosphorus‐doped Si:F:H alloys

Complete microcrystallinep‐i‐nsolar cell—Crystalline or amorphous cell behavior?

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