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      The Design and Life Test of a Multifunction Power Amplifier for Space Application

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          Abstract

          A new multifunction power amplifier (MFPA) is designed and fabricated for the application of point-to-point K-Band backhaul TR module. A DC temperature life test was performed to model the up-limit temperature effect of the designed MFPA under space application. After 240 hours of 100°C life test, the test results illustrate that the designed MFPA has only slight power degradation at the saturation region without change of the linear gain. The general performance of the designed MFPA satisfies the requirement of the application scenario.

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          Breakdown walkout in pseudomorphic HEMT's

          C. Canali, F. Fantini, R. Menozzi … (1996)
          Article 0 comments Cited 18 times – based on 0 reviews     Review now
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            Degradation Mechanisms for GaN and GaAs High Speed Transistors

            David J. Cheney, Erica Douglas, Lu Tian Liu … (2012)
            We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate), and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.
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              Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs

              M. Dammann, A. Leuther, F. Benkhelifa … (2003)
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                Author and article information

                Journal
                Title: Active and Passive Electronic Components
                Abbreviated Title: Active and Passive Electronic Components
                Publisher: Hindawi Limited
                ISSN (Print): 0882-7516
                ISSN (Electronic): 1563-5031
                Publication date Created: 2016
                Publication date (Print): 2016
                Volume: 2016
                Issue:
                Pages: 1-6
                Article
                DOI: 10.1155/2016/1312721
                SO-VID: 9fcde0e7-f1ee-4086-bd00-8e257189bf3e
                Copyright © © 2016
                License:

                http://creativecommons.org/licenses/by/4.0/

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