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      Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

      Author(s): , , , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Crystal Growth
      Publisher: Elsevier BV

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          Dislocations and strain relief in compositionally graded layers

          J Tersoff (1993)
          Article 0 comments Cited 46 times – based on 0 reviews     Review now
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            Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

            Eugene Fitzgerald, Nathaniel J Quitoriano (2007)
            Article 0 comments Cited 22 times – based on 0 reviews     Review now
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              Influence of strain on semiconductor thin film epitaxy

              Y Xie, E. Fitzgerald, S. B. Samavedam … (1997)
              Article 0 comments Cited 17 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Crystal Growth
                Abbreviated Title: Journal of Crystal Growth
                Publisher: Elsevier BV
                ISSN (Print): 00220248
                Publication date Created: March 2013
                Publication date (Print): March 2013
                Volume: 366
                Issue:
                Pages: 55-60
                Article
                DOI: 10.1016/j.jcrysgro.2012.12.017
                SO-VID: a6b1eff1-0dea-41ed-9b7c-db17af26cdcc
                Copyright © © 2013
                License:

                http://www.elsevier.com/tdm/userlicense/1.0/

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