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      Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

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          Large-signal analysis of a silicon Read diode oscillator

          D.L. Scharfetter, H.K. Gummel (1969)
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            CMOS scaling into the nanometer regime

            Yuan Taur, D.A. Buchanan, WEI CHEN … (1997)
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              Characterisation and modeling of mismatch in MOS transistors for precision analog design

              R.A. Hadaway, M.A. Copeland, K.R. Lakshmikumar (1986)
              Article 0 comments Cited 89 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: IEEE Transactions on Electron Devices
                Abbreviated Title: IEEE Trans. Electron Devices
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 00189383
                Publication date (Print): Dec. 1998
                Volume: 45
                Issue: 12
                Pages: 2505-2513
                Article
                DOI: 10.1109/16.735728
                SO-VID: a96496eb-5014-4f7c-830c-76c6acb6a72e
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