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      • Record: found
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      Growth of single‐crystal CoSi2on Si(111)

      Author(s): , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Refractory silicides for integrated circuits

          S. P. Murarka (1980)
          Article 0 comments Cited 166 times – based on 0 reviews     Review now
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            Double heteroepitaxy in the Si (111)/CoSi2/Si structure

            Hiroshi Ishiwara, Seijiro Furukawa, Shyuichi Saitoh (1980)
            Article 0 comments Cited 47 times – based on 0 reviews     Review now
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              Silicon/metal silicide heterostructures grown by molecular beam epitaxy

              J. Poate, J. C. Bean (1980)
              Article 0 comments Cited 44 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: April 15 1982
                Publication date (Print): April 15 1982
                Volume: 40
                Issue: 8
                Pages: 684-686
                Article
                DOI: 10.1063/1.93234
                SO-VID: af835462-292d-4e8f-b07e-2a3bc9ddc681
                Copyright © © 1982
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