Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition

Sahu, B. B.; Yin, Yongyi; Han, Jeon G.

doi:10.1063/1.4944675

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Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition

Author(s): B. B. Sahu ¹ , Yongyi Yin ¹ , Jeon G. Han ¹

Publication date Created: March 2016

Publication date (Print): March 2016

Journal: Physics of Plasmas

Publisher: AIP Publishing

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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

L. Canham (1990)

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Visible light emission due to quantum size effects in highly porous crystalline silicon

A G Cullis, L. Canham (1991)

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Cross Sections for Electron Collisions with Nitrogen Molecules

Yukikazu Itikawa (2006)

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Author and article information

Journal

Title: Physics of Plasmas

Abbreviated Title: Physics of Plasmas

Publisher: AIP Publishing

ISSN (Print): 1070-664X

ISSN (Electronic): 1089-7674

Publication date Created: March 2016

Publication date (Print): March 2016

Volume: 23

Issue: 3

Page: 033512

Affiliations

[1 ]Center for Advanced Plasma Surface Technology (CAPST), NU-SKKU Joint institute for plasma nano materials (IPNM), Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea

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DOI: 10.1063/1.4944675

SO-VID: b1dfc9e5-d2b7-490d-9d07-87c5946090a2

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Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition

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Most cited references 44

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Visible light emission due to quantum size effects in highly porous crystalline silicon

Cross Sections for Electron Collisions with Nitrogen Molecules

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