Magnetic Tunnel Junctions for Spintronic Memories and Beyond

Ikeda, Shoji; Hayakawa, Jun; Lee, Young Min; Matsukura, Fumihiro; Ohno, Yuzo; Hanyu, Takahiro; Ohno, Hideo

doi:10.1109/TED.2007.894617

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Magnetic Tunnel Junctions for Spintronic Memories and Beyond

Author(s): Shoji Ikeda , Jun Hayakawa , Young Min Lee , Fumihiro Matsukura , Yuzo Ohno , Takahiro Hanyu , Hideo Ohno

Publication date (Print): May 2007

Journal: IEEE Transactions on Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

W. Butler, X. -G. Zhang, T. Schulthess … (2001)

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Current-induced magnetization reversal in nanopillars with perpendicular anisotropy

S. Mangin, D. Ravelosona, J. Katine … (2006)

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Is Open Access

Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars

F. Albert, E. B. Myers, J. Katine … (1999)

Using thin film pillars ~100 nm in diameter, containing two ferromagnetic Co layers of different thicknesses separated by a paramagnetic Cu spacer, we examine effects of torques due to spin-polarized currents flowing perpendicular to the layers. In accordance with spin-transfer theory, spin-polarized electrons flowing from the thin to the thick Co layer can switch the magnetic moments of the layers antiparallel, while a reversed electron flow causes switching to a parallel state. When large magnetic fields are applied, the current no longer fully reverses the magnetic moment, but instead stimulates spin-wave excitations.