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      Assessing the potential of TOPCon solar cells architecture using industrial n-type cast-mono silicon material

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          Abstract

          Cast-mono silicon material is interesting for its lower carbon footprint compared to Czochralski (Cz) monocrystalline silicon. However, solar cells fabricated using cast-mono (CM) silicon show lower performances. In this work, two routes to make cast-mono silicon advantageous over Cz silicon are considered. The first route is to further reduce carbon footprint of cast-mono silicon, by using Upgraded Metallurgical Grade silicon (UMG-Si) feedstock instead of Solar Grade silicon (SoG-Si) feedstock. TOPCon solar cells are fabricated using both feedstocks, and cast-mono growth technology, using industrial-type furnaces. Laboratory studies show that UMG-Si can result in efficiencies higher than solar cells made of SoG-Si when feeding the material to a CM crystallization process. But when compared to Cz, CM-UMG-Si TOPCon solar cells conversion efficiency values are still 0.5% abs lower. The second route is to take advantage of the TOPCon passivation layer (e.g., poly-Si) ability to getter metallic impurities, and thus improve the quality of cast-mono material. Several TOPCon sequences are tested and their effect on the carrier recombination properties of the device are studied. In the end, solar cells are fabricated and again, UMG-Si solar cells show better results than SoG-Si solar cells, with efficiency up to 22.65%, independently confirmed.

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          Shunt types in crystalline silicon solar cells

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            Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells

            We apply n- and p-type polycrystalline silicon (poly-Si) films on tunneling SiO x to form passivated contacts to n-type Si wafers. The resulting induced emitter and n+/n back surface field junctions of high carrier selectivity and low contact resistivity enable high efficiency Si solar cells. This work addresses the materials science of their performance governed by the properties of the individual layers (poly-Si, tunneling oxide) and more importantly, by the process history of the cell as a whole. Tunneling SiO x layers (<2 nm) are grown thermally or chemically, followed by a plasma enhanced chemical vapor deposition growth of p+ or n+ doped a-Si:H. The latter is thermally crystallized into poly-Si, resulting in grain nucleation and growth as well as dopant diffusion within the poly-Si and penetration through the tunneling oxide into the Si base wafer. The cell process is designed to improve the passivation of both oxide interfaces and tunneling transport through the oxide. A novel passivation technique involves coating of the passivated contact and whole cell with atomic layer deposited Al 2 O 3 and activating them at 400 °C. The resulting excellent passivation persists after subsequent chemical removal of the Al 2 O 3 . The preceding cell process steps must be carefully tailored to avoid structural and morphological defects, as well as to maintain or improve passivation, and carrier selective transport. Furthermore, passivated contact metallization presents significant challenges, often resulting in passivation loss. Suggested remedies include improved Si cell wafer surface morphology (without micropyramids) and postdeposited a-Si:H capping layers over the poly-Si.
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              Fill factor analysis of solar cells' current-voltage curves

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                Author and article information

                Journal
                epjpv
                https://www.epj-pv.org
                EPJ Photovoltaics
                EPJ Photovolt.
                EDP Sciences
                2105-0716
                30 April 2024
                30 April 2024
                2024
                : 15
                : ( publisher-idID: epjpv/2024/01 )
                : 16
                Affiliations
                [1 ] Photowatt, 33 rue Saint-Honoré, , 38300 Bourgoin-Jallieu, France,
                [2 ] Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, , 79110 Freiburg, Germany,
                [3 ] EDF R&D − Institut photovoltaïque d'Ile de France (IPVF), 18 Boulevard Thomas Gobert, , 91120 Palaiseau, France,
                Author notes
                Article
                pv230053
                10.1051/epjpv/2024016
                bb788b0a-9191-4356-9cc3-efa54ca05072
                © B. Bazer-Bachi et al., Published by EDP Sciences, 2024

                This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

                History
                : 12 September 2023
                : 20 March 2024
                Page count
                Figures: 4, Tables: 3, Equations: 0, References: 31, Pages: 7
                Categories
                Special Issue on ‘EU PVSEC 2023: State of the Art and Developments in Photovoltaics’, edited by Robert Kenny and João Serra
                Original Article
                Custom metadata
                EPJ Photovoltaics 15, 16 (2024)
                yes
                2024
                2024
                2024

                Sustainable & Green chemistry,Materials technology,Semiconductors,Materials for energy,Technical & Applied physics,Renewable energy
                TOPCon,Cast-mono,SoG,UMG

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