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      Variation of the effective Richardson constant of Pt‐Si Schottky diode due to annealing treatment

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      Applied Physics Letters
      AIP Publishing

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          Solid‐Solid Reactions in Pt–Si Systems

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            Ion-implanted low-barrier PtSi Schottky-barrier diodes

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              Electrical Properties of Platinum-Silicon Contact Annealed in an H2Ambient

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                March 15 1985
                March 15 1985
                : 46
                : 6
                : 557-559
                Article
                10.1063/1.95537
                bd40cd23-33a6-4bf7-b8de-8c372ad68c46
                © 1985
                History

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