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Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
January 1984
January 1984
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Most cited references16
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Strained‐layer superlattices from lattice mismatched materials
G. Osbourn (1982)
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\({\mathrm{In}}_{x}{\mathrm{Ga}}_{1-x}\mathrm{As}-{\mathrm{In}}_{y}{\mathrm{Ga}}_{1-y}\mathrm{As}\)strained-layer superlattices: A proposal for useful, new electronic materials
G. Osbourn (1983)
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A one-dimensional SiGe superlattice grown by UHV epitaxy
E. Kasper, H. -J. Herzog, H. Kibbel (1975)