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      Effect of Acetylene Links on Electronic and Optical Properties of Semiconducting Graphynes

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          Abstract

          The family of graphynes, novel two-dimensional semiconductors with various and fascinating chemical and physical properties, has attracted great interest from both scientific and industrial communities. Currently, the focus is on graphdiyne or graphyne-2. In this work, we systematically study the effect of acetylene, i.e., carbon–carbon triple bond, links on the electronic and optical properties of a series of graphynes (graphyne- n, where n = 1–5, the number of acetylene bonds) using ab initio calculations. We find an even–odd pattern, i.e., n = 1, 3, 5 and n = 2, 4 having different features, which has not been discovered in studying graphyne or graphdiyne alone. It is found that as the number of acetylene bonds increases, the electron effective mass increases continuously in the low-energy range because of the flatter conduction band induced by the longer acetylene links. Meanwhile, longer acetylene links result in a larger red shift of the imaginary part of the dielectric function, loss function, and extinction coefficient. In this work, we propose an effective method to tune and manipulate both the electronic and optical properties of graphynes for the applications in optoelectronic devices and photochemical catalysis.

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          A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu.

          The method of dispersion correction as an add-on to standard Kohn-Sham density functional theory (DFT-D) has been refined regarding higher accuracy, broader range of applicability, and less empiricism. The main new ingredients are atom-pairwise specific dispersion coefficients and cutoff radii that are both computed from first principles. The coefficients for new eighth-order dispersion terms are computed using established recursion relations. System (geometry) dependent information is used for the first time in a DFT-D type approach by employing the new concept of fractional coordination numbers (CN). They are used to interpolate between dispersion coefficients of atoms in different chemical environments. The method only requires adjustment of two global parameters for each density functional, is asymptotically exact for a gas of weakly interacting neutral atoms, and easily allows the computation of atomic forces. Three-body nonadditivity terms are considered. The method has been assessed on standard benchmark sets for inter- and intramolecular noncovalent interactions with a particular emphasis on a consistent description of light and heavy element systems. The mean absolute deviations for the S22 benchmark set of noncovalent interactions for 11 standard density functionals decrease by 15%-40% compared to the previous (already accurate) DFT-D version. Spectacular improvements are found for a tripeptide-folding model and all tested metallic systems. The rectification of the long-range behavior and the use of more accurate C(6) coefficients also lead to a much better description of large (infinite) systems as shown for graphene sheets and the adsorption of benzene on an Ag(111) surface. For graphene it is found that the inclusion of three-body terms substantially (by about 10%) weakens the interlayer binding. We propose the revised DFT-D method as a general tool for the computation of the dispersion energy in molecules and solids of any kind with DFT and related (low-cost) electronic structure methods for large systems.
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            Electric Field Effect in Atomically Thin Carbon Films

            We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
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              Soft self-consistent pseudopotentials in a generalized eigenvalue formalism

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                Author and article information

                Journal
                ACS Omega
                ACS Omega
                ao
                acsodf
                ACS Omega
                American Chemical Society
                2470-1343
                19 April 2021
                27 April 2021
                : 6
                : 16
                : 10997-11004
                Affiliations
                []School of Materials and Energy, Southwest University , Chongqing 400715, China
                []Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies, Southwest University , Chongqing 400715, P. R. China
                [§ ]Department of Mechanic Engineering & Engineering Science, National University of Singapore , Singapore 117575, Singapore
                Author notes
                Author information
                http://orcid.org/0000-0002-8822-7036
                http://orcid.org/0000-0002-7396-0323
                http://orcid.org/0000-0001-6198-5753
                Article
                10.1021/acsomega.1c00840
                8153916
                c4d602d4-c1a5-4d29-a5b7-87cbf370e6ce
                © 2021 The Authors. Published by American Chemical Society

                Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works ( https://creativecommons.org/licenses/by-nc-nd/4.0/).

                History
                : 16 February 2021
                : 06 April 2021
                Funding
                Funded by: Ministry of Education - Singapore, doi 10.13039/501100001459;
                Award ID: R-265-000-691-114
                Funded by: Southwest University, doi 10.13039/501100006250;
                Award ID: ZSM2021008
                Funded by: Ministry of Education of the People''s Republic of China, doi 10.13039/501100002338;
                Award ID: XDJK2017B043
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                Article
                Custom metadata
                ao1c00840
                ao1c00840

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