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      Optimized Aluminum Reflector for Enhancement of UVC Cathodoluminescence Based-AlGaN Materials with Carbon Nanotube Field Emitters

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          Abstract

          The far ultraviolet C (UVC) light sources based on carbon nanotube (CNT) field emitters as excitation sources have become promising light sources for sterilization, disinfection, and water purification. However, the low light extraction efficiency of UVC–CNT light sources still hinders the practical application of these structures. Herein, we report an optimized aluminum (Al) reflector to enhance the light extraction efficiency of UVC–CNT light sources. Optical analysis of UVC-CNT light sources covered by the Al reflectors with various thicknesses ranging from 30 to 150 nm was performed to realize the optimized reflector. The UVC-CNT light sources exhibit the highest light extraction efficiency when the Al reflector layer has an optimized thickness of 100 nm. For comparison, the cathodoluminescence (CL) spectra were recorded for UVC–CNT light sources with and without the optimized Al reflector. The measured light output power and the estimated power efficiency of the UVC–CNT light-source-tube with Al reflector were enhanced by about 27 times over the reference. This enhancement is mainly attributed to the outstanding reflection effect of the Al reflector.

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          An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

          Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto (2006)
          Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.
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            Band structure and fundamental optical transitions in wurtzite AlN

            J. LI, K. Nam, H. Jiang … (2003)
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              222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

              Jun Norimatsu, Takayoshi Takano, Kenji Tsubaki … (2009)
              Article 0 comments Cited 73 times – based on 0 reviews     Review now
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                Author and article information

                Contributors
                Wan Soo Yun: Role: Academic Editor
                Sung-Hoon Kim: Role: Academic Editor
                Journal
                Journal ID (nlm-ta): Molecules
                Journal ID (iso-abbrev): Molecules
                Journal ID (publisher-id): molecules
                Title: Molecules
                Publisher: MDPI
                ISSN (Electronic): 1420-3049
                Publication date (Electronic): 30 June 2021
                Publication date Collection: July 2021
                Volume: 26
                Issue: 13
                Electronic Location Identifier: 4025
                Affiliations
                [1 ]Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, Korea; 177329@ 123456jnu.ac.kr (M.K.C.M.); sinboozon1@ 123456naver.com (S.K.S.)
                [2 ]SBK Materials Co., Gwangju 61186, Korea
                [3 ]Division of Electrical & Electronic Engineering, Korea Maritime University, Busan 49112, Korea; nwjang@ 123456kmou.ac.kr
                [4 ]Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea; nslee@ 123456sejong.ac.kr
                [5 ]Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef 62511, Egypt
                Author notes
                [* ]Correspondence: junekey@ 123456jnu.ac.kr (J.K.L.); wael.farag@ 123456science.bsu.edu.eg (W.Z.T.); Tel.: +82-62-530-1692 (J.K.L.); Fax: +82-62-530-1699 (J.K.L.)
                Article
                Publisher ID: molecules-26-04025
                DOI: 10.3390/molecules26134025
                PMC ID: 8271809
                PubMed ID: 34209406
                SO-VID: c79f5604-a1ae-4d47-9d0d-0fda47899ccb
                Copyright © © 2021 by the authors.
                License:

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( https://creativecommons.org/licenses/by/4.0/).

                History
                Date received : 14 June 2021
                Date accepted : 27 June 2021
                Categories
                Subject: Article

                Keywords: al reflector,algan materials,cnts,uvc emission,cathodoluminescence
                Data availability:
                Keywords: al reflector, algan materials, cnts, uvc emission, cathodoluminescence

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