Strain-mediated phase coexistence in MnAs heteroepitaxial films on GaAs: An x-ray diffraction study

Braun, W.; Ploog, K. H.; Schippan, F.; Däweritz, L; Kaganer, V. M.; Jenichen, B.

doi:10.1103/PhysRevB.66.045305

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Strain-mediated phase coexistence in MnAs heteroepitaxial films on GaAs: An x-ray diffraction study

Author(s): V. M. Kaganer , B. Jenichen , F. Schippan , W. Braun , L. Däweritz , K. H. Ploog

Publication date (Electronic): July 10 2002

Journal: Physical Review B

Publisher: American Physical Society (APS)

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The Tension of Metallic Films Deposited by Electrolysis

G. G. Stoney (1909)

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Room-temperature spin injection from Fe into GaAs.

H. J. Zhu, M Ramsteiner, H Kostial … (2001)

Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.