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      Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

      Author(s): , ,
      Publication date (Electronic):
      Journal: Physical Review B
      Publisher: American Physical Society (APS)

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          Luminescence properties of defects in GaN

          Michael A. Reshchikov, Hadis Morkoç (2005)
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            Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus

            G. L. Pearson, J. Bardeen (1949)
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              Pair Spectra and "Edge" Emission in Gallium Phosphide

              F. Trumbore, D G Thomas, M. Gershenzon (1964)
              Article 0 comments Cited 149 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): PRBMDO
                Title: Physical Review B
                Abbreviated Title: Phys. Rev. B
                Publisher: American Physical Society (APS)
                ISSN (Print): 2469-9950
                ISSN (Electronic): 2469-9969
                Publication date Created: May 2018
                Publication date (Electronic): May 17 2018
                Volume: 97
                Issue: 20
                Article
                DOI: 10.1103/PhysRevB.97.205204
                SO-VID: d0456a19-3a6e-43d0-89c2-782485cb9900
                Copyright © © 2018
                License:

                https://link.aps.org/licenses/aps-default-license

                https://link.aps.org/licenses/aps-default-accepted-manuscript-license

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