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      Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

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      Journal of Applied Physics
      AIP Publishing

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          Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

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            The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors

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              Photon-Radiative Recombination of Electrons and Holes in Germanium

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                March 1961
                March 1961
                : 32
                : 3
                : 510-519
                Article
                10.1063/1.1736034
                d07bafd2-ecd7-4519-ac71-85e6793b63d3
                © 1961
                History

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