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      Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

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          The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors

          W. Shockley (1949)
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            Electrical Properties of Silicon Containing Arsenic and Boron

            J Maita, F. Morin (1954)
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              Avalanche Breakdown in Silicon

              K. McKay (1954)
              Article 0 comments Cited 108 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Proceedings of the IRE
                Abbreviated Title: Proc. IRE
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 0096-8390
                Publication date Created: September 1957
                Publication date (Print): September 1957
                Volume: 45
                Issue: 9
                Pages: 1228-1243
                Article
                DOI: 10.1109/JRPROC.1957.278528
                SO-VID: 57b2b063-a2a4-475c-be7a-57de9a8c7879
                Copyright © © 1957
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