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      Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing

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          Abstract

          Graphene is a two-dimensional network in which sp 2-hybridized carbon atoms are arranged in two different triangular sub-lattices (A and B). By incorporating nitrogen atoms into graphene, its physico-chemical properties could be significantly altered depending on the doping configuration within the sub-lattices. Here, we describe the synthesis of large-area, highly-crystalline monolayer N-doped graphene (NG) sheets via atmospheric-pressure chemical vapor deposition, yielding a unique N-doping site composed of two quasi-adjacent substitutional nitrogen atoms within the same graphene sub-lattice (N 2 AA). Scanning tunneling microscopy and spectroscopy (STM and STS) of NG revealed the presence of localized states in the conduction band induced by N 2 AA-doping, which was confirmed by ab initio calculations. Furthermore, we demonstrated for the first time that NG could be used to efficiently probe organic molecules via a highly improved graphene enhanced Raman scattering.

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          Generalized Gradient Approximation Made Simple.

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            Doping graphene with metal contacts

            Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by \(\sim 0.5\) eV. At equilibrium separations, the crossover from \(p\)-type to \(n\)-type doping occurs for a metal work function of \(\sim 5.4\) eV, a value much larger than the graphene work function of 4.5 eV. The numerical results for the Fermi level shift in graphene are described very well by a simple analytical model which characterizes the metal solely in terms of its work function, greatly extending their applicability.
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              Growth of graphene from solid carbon sources.

              Monolayer graphene was first obtained as a transferable material in 2004 and has stimulated intense activity among physicists, chemists and material scientists. Much research has been focused on developing routes for obtaining large sheets of monolayer or bilayer graphene. This has been recently achieved by chemical vapour deposition (CVD) of CH(4) or C(2)H(2) gases on copper or nickel substrates. But CVD is limited to the use of gaseous raw materials, making it difficult to apply the technology to a wider variety of potential feedstocks. Here we demonstrate that large area, high-quality graphene with controllable thickness can be grown from different solid carbon sources-such as polymer films or small molecules-deposited on a metal catalyst substrate at temperatures as low as 800 °C. Both pristine graphene and doped graphene were grown with this one-step process using the same experimental set-up.
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                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                17 August 2012
                2012
                : 2
                : 586
                Affiliations
                [1 ]simpleDepartment of Physics, The Pennsylvania State University, University Park , PA 16802, USA
                [2 ]simpleCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, TN 37831, USA
                [3 ]simpleInstitute of Condensed Matter and Nanosciences, Université catholique de Louvain , Chemin des étoiles 8, 1348 Louvain-la-Neuve, Belgium
                [4 ]simpleResearch Center for Exotic Nanocarbons, Shinshu University , Wakasato 4-17-1, Nagano-city 380-8553, Japan
                [5 ]simplePhysics Department, Ceará Federal University , Caixa Postal 6030 Fortaleza-Ceará, Brazil
                [6 ]These authors contributed equally to this work
                Author notes
                Article
                srep00586
                10.1038/srep00586
                3421434
                22905317
                d1a18bad-6fa3-47b2-ae8e-d0be30346ce3
                Copyright © 2012, Macmillan Publishers Limited. All rights reserved

                This work is licensed under a Creative Commons Attribution-NonCommercial-No Derivative Works 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/

                History
                : 27 April 2012
                : 30 July 2012
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