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      Conductance quantization suppression in the quantum Hall regime

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          Abstract

          Conductance quantization is the quintessential feature of electronic transport in non-interacting mesoscopic systems. This phenomenon is observed in quasi one-dimensional conductors at zero magnetic field B, and the formation of edge states at finite magnetic fields results in wider conductance plateaus within the quantum Hall regime. Electrostatic interactions can change this picture qualitatively. At finite B, screening mechanisms in narrow, gated ballistic conductors are predicted to give rise to an increase in conductance and a suppression of quantization due to the appearance of additional conduction channels. Despite being a universal effect, this regime has proven experimentally elusive because of difficulties in realizing one-dimensional systems with sufficiently hard-walled, disorder-free confinement. Here, we experimentally demonstrate the suppression of conductance quantization within the quantum Hall regime for graphene nanoconstrictions with low edge roughness. Our findings may have profound impact on fundamental studies of quantum transport in finite-size, two-dimensional crystals with low disorder.

          Abstract

          Conductance quantization is the hallmark of non-interacting confined systems. The authors show that the quantization in graphene nanoconstrictions with low edge disorder is suppressed in the quantum Hall regime. This is explained by the addition of new conductance channels due to electrostatic screening.

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          Electrostatics of edge channels

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            Transport in a one-channel Luttinger liquid

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              Possible Spin Polarization in a One-Dimensional Electron Gas

              In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to \(0.7(2e^2/h)\). In an in-plane magnetic field all the 1D subbands show Zeeman splitting and in the wide channel limit the \(g\)-factor is \(\mid g \mid = 0.4\), close to that of bulk GaAs. For the last subband spin-splitting originates from the structure at \(0.7(2e^2/h)\), indicating spin polarization at \(B=0\). The measured enhancement of the \(g\)-factor as the subbands are depopulated suggests that the ``0.7 structure'' is induced by electron-electron interactions.
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                Author and article information

                Contributors
                jcar@nanotech.dtu.dk
                peter.boggild@nanotech.dtu.dk
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                13 February 2018
                13 February 2018
                2018
                : 9
                : 659
                Affiliations
                [1 ]ISNI 0000 0001 2181 8870, GRID grid.5170.3, Center for Nanostructured Graphene (CNG), Department of Micro- and Nanotechnology, , Technical University of Denmark, ; 2800 Kongens Lyngby, Denmark
                [2 ]GRID grid.7080.f, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, , Campus UAB, ; Bellaterra, Barcelona, 08193 Spain
                [3 ]GRID grid.7080.f, Universitat Autònoma de Barcelona, ; Bellaterra (Cerdanyola del Vallès), 08193 Spain
                Author information
                http://orcid.org/0000-0001-8943-1170
                http://orcid.org/0000-0003-4566-628X
                http://orcid.org/0000-0002-9784-989X
                http://orcid.org/0000-0002-4342-0449
                Article
                3064
                10.1038/s41467-018-03064-8
                5811439
                dd05018f-3e81-44ce-9b76-9ca52eb7184d
                © The Author(s) 2018

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 4 September 2017
                : 17 January 2018
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