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      Phase stability and alloy-related trends in Ti–Al–N, Zr–Al–N and Hf–Al–N systems from first principles

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          Abstract

          Transition metal aluminium nitride (TM–Al–N) thin films are valued for their excellent mechanical (e.g. hardness) as well as protective (e.g. oxidation resistance) properties. This paper addresses the structure and phase stability of group IVB TM–Al–N systems Ti 1− x Al x N, Zr 1− x Al x N, and Hf 1− x Al x N. The predicted stability regions of the rock salt cubic structures are x ≤ 0.7, x ≤ 0.45, and x ≤ 0.45, respectively, while the wurtzite-type single phase field is obtained for x ≥ 0.7, x ≥ 0.68, and x ≥ 0.62 respectively. The predicted phase stability regions and the broad dual-phase transition regions in the case of Zr 1− x Al x N and Hf 1− x Al x N are validated by experiments. Furthermore, the phase transition from cubic to wurtzite with increasing Al content in the alloys is correlated with changes of electronic structure and bonding in the systems.

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          Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation

          We report on the optimisation of the growth conditions of manganite La0.7Sr0.3MnO3 (LSMO) thin films prepared by Channel Spark Ablation (CSA). CSA belongs to pulsed electron deposition methods and its energetic and deposition parameters are quite similar to those of pulsed laser deposition. The method has been already proven to provide manganite films with good magnetic properties, but the films were generally relatively rough (a few nm coarseness). Here we show that increasing the oxygen deposition pressure with respect to previously used regimes, reduces the surface roughness down to unit cell size while maintaining a robust magnetism. We analyse in detail the effect of other deposition parameters, like accelerating voltage, discharging energy, and temperature and provide on this basis a set of optimal conditions for the growth of atomically flat films. The thicknesses for which atomically flat surface was achieved is as high as about 10-20 nm, corresponding to films with room temperature magnetism. We believe such magnetic layers represent appealing and suitable electrodes for various spintronic devices.
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            Bilayer Graphene Quantum Dot Defined by Topgates

            We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.
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              Fluxonic Cellular Automata

              We formulate a new concept for computing with quantum cellular automata composed of arrays of nanostructured superconducting devices. The logic states are defined by the position of two trapped flux quanta (vortices) in a 2x2 blind-hole-matrix etched on a mesoscopic superconducting square. Such small computational unit-cells are well within reach of current fabrication technology. In an array of unit-cells, the vortex configuration of one cell influences the penetrating flux lines in the neighboring cell through the screening currents. Alternatively, in conjoined cells, the information transfer can be strengthened by the interactions between the supercurrents in adjacent cells. Here we present the functioning logic gates based on this fluxonic cellular automata (FCA), where the logic operations are verified through theoretical simulations performed in the framework of the time-dependent Ginzburg-Landau theory. The input signals are defined by current loops placed on top of the two diagonal blind holes of the input cell. For given current-polarization, external flux lines are attracted or repelled by the loops, forming the '0' or '1' configuration. The read-out technology may be chosen from a large variety of modern vortex imaging methods, transport and LDOS measurements.
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                Author and article information

                Journal
                Surf Coat Technol
                Surf Coat Technol
                Surface & Coatings Technology
                Elsevier Sequoia
                0257-8972
                1879-3347
                25 December 2011
                25 December 2011
                : 206
                : 7-5
                : 1698-1704
                Affiliations
                [a ]Department of Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Franz-Josef-Strasse 18, A-8700 Leoben, Austria
                [b ]State Key Laboratory of Powder Metallurgy, Central South University, Changsha Hunan, 410083, China
                Author notes
                [* ]Corresponding author. david.holec@ 123456unileoben.ac.at
                Article
                SCT17044
                10.1016/j.surfcoat.2011.09.019
                3271382
                22319224
                e3731616-0b46-4b0a-b739-51248126d432
                © 2011 Elsevier B.V.

                This document may be redistributed and reused, subject to certain conditions.

                History
                Categories
                Article

                Thin films & surfaces
                tialn,hard coatings,density functional theory (dft),zraln,hfaln
                Thin films & surfaces
                tialn, hard coatings, density functional theory (dft), zraln, hfaln

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