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      Electrochemical strain microscopy probes morphology-induced variations in ion uptake and performance in organic electrochemical transistors

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      Nature Materials
      Springer Nature

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          Abstract

          Electrochemical strain microscopy reveals the interconnection between ion uptake and nanoscale variations of morphology in organic semiconductor films. Such changes locally affect the operation regime of organic transistors exposed to electrolytes.

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          Is Open Access

          High-performance transistors for bioelectronics through tuning of channel thickness

          Transistors with tunable transconductance allow high-quality recordings of human brain rhythms.
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            Electrolyte-gated transistors for organic and printed electronics.

            Here we summarize recent progress in the development of electrolyte-gated transistors (EGTs) for organic and printed electronics. EGTs employ a high capacitance electrolyte as the gate insulator; the high capacitance increases drive current, lowers operating voltages, and enables new transistor architectures. Although the use of electrolytes in electronics is an old concept going back to the early days of the silicon transistor, new printable, fast-response polymer electrolytes are expanding the potential applications of EGTs in flexible, printed digital circuits, rollable displays, and conformal bioelectronic sensors. This report introduces the structure and operation mechanisms of EGTs and reviews key developments in electrolyte materials for use in printed electronics. The bulk of the article is devoted to electrical characterization of EGTs and emerging applications.
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              The Rise of Organic Bioelectronics

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                Author and article information

                Journal
                Nature Materials
                Nat Mater
                Springer Nature
                1476-1122
                1476-4660
                June 19 2017
                June 19 2017
                :
                :
                Article
                10.1038/nmat4918
                28628123
                e5af4d0a-6c69-4a52-a7cb-3224a6c36c67
                © 2017
                History

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