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      Needs, Trends, and Advances in Inorganic Scintillators

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          Is Open Access

          Observation of a new boson at a mass of 125 GeV with the CMS experiment at the LHC

          Results are presented from searches for the standard model Higgs boson in proton-proton collisions at sqrt(s) = 7 and 8 TeV in the Compact Muon Solenoid experiment at the LHC, using data samples corresponding to integrated luminosities of up to 5.1 inverse femtobarns at 7 TeV and 5.3 inverse femtobarns at 8 TeV. The search is performed in five decay modes: gamma gamma, ZZ, WW, tau tau, and b b-bar. An excess of events is observed above the expected background, with a local significance of 5.0 standard deviations, at a mass near 125 GeV, signalling the production of a new particle. The expected significance for a standard model Higgs boson of that mass is 5.8 standard deviations. The excess is most significant in the two decay modes with the best mass resolution, gamma gamma and ZZ; a fit to these signals gives a mass of 125.3 +/- 0.4 (stat.) +/- 0.5 (syst.) GeV. The decay to two photons indicates that the new particle is a boson with spin different from one.
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            Detection of X-ray photons by solution-processed lead halide perovskites

            The evolution of real-time medical diagnostic tools such as angiography and computer tomography from radiography based on photographic plates was enabled by the development of integrated solid-state X-ray photon detectors, based on conventional solid-state semiconductors. Recently, for optoelectronic devices operating in the visible and near infrared spectral regions, solution-processed organic and inorganic semiconductors have also attracted immense attention. Here we demonstrate a possibility to use such inexpensive semiconductors for sensitive detection of X-ray photons by direct photon-to-current conversion. In particular, methylammonium lead iodide perovskite (CH 3 NH 3 PbI 3 ) offers a compelling combination of fast photoresponse and a high absorption cross-section for X-rays, owing to the heavy Pb and I atoms. Solution processed photodiodes as well as photoconductors are presented, exhibiting high values of X-ray sensitivity (up to 25 µC mGy air -1 cm -3 ) and responsivity (1.9×10 4 carriers/photon), which are commensurate with those obtained by the current solid-state technology.
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              Quantum-dot-in-perovskite solids.

              Heteroepitaxy-atomically aligned growth of a crystalline film atop a different crystalline substrate-is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.
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                Author and article information

                Journal
                IEEE Transactions on Nuclear Science
                IEEE Trans. Nucl. Sci.
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9499
                1558-1578
                August 2018
                August 2018
                : 65
                : 8
                : 1977-1997
                Article
                10.1109/TNS.2018.2840160
                e70f398b-518a-497c-95c1-289e3d6d0dd1
                © 2018

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