15
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Evidence for 4 e charge of Cooper quartets in a biased multi-terminal graphene-based Josephson junction

      research-article

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          In a Josephson junction (JJ) at zero bias, Cooper pairs are transported between two superconducting contacts via the Andreev bound states (ABSs) formed in the Josephson channel. Extending JJs to multiple superconducting contacts, the ABSs in the Josephson channel can coherently hybridize Cooper pairs among different superconducting electrodes. Biasing three-terminal JJs with antisymmetric voltages, for example, results in a direct current (DC) of Cooper quartet (CQ), which involves a four-fermion entanglement. Here, we report half a flux periodicity in the interference of CQ formed in graphene based multi-terminal (MT) JJs with a magnetic flux loop. We observe that the quartet differential conductance associated with supercurrent exhibits magneto-oscillations associated with a charge of 4 e, thereby presenting evidence for interference between different CQ processes. The CQ critical current shows non-monotonic bias dependent behavior, which can be modeled by transitions between Floquet-ABSs. Our experimental observation for voltage-tunable non-equilibrium CQ-ABS in flux-loop-JJs significantly extends our understanding of MT-JJs, enabling future design of topologically unique ABS spectrum.

          Abstract

          Here, the authors perform measurements of the interference effects of Cooper Quartets (CQ), observed in a multi-terminal graphene Josephson junction where two terminals are tied by a flux loop. By biasing the superconducting contacts, they identify a superconducting branch attributed to CQ currents, and present evidence for interference between different CQ processes.

          Related collections

          Most cited references44

          • Record: found
          • Abstract: not found
          • Article: not found

          Solution of the Schrödinger Equation with a Hamiltonian Periodic in Time

            Bookmark
            • Record: found
            • Abstract: found
            • Article: not found

            Boron nitride substrates for high-quality graphene electronics

            Graphene devices on standard SiO(2) substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. Although suspending the graphene above the substrate leads to a substantial improvement in device quality, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved with a suspended sample. Hexagonal boron nitride (h-BN) is an appealing substrate, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps. It also has a lattice constant similar to that of graphite, and has large optical phonon modes and a large electrical bandgap. Here we report the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal h-BN substrates, by using a mechanical transfer process. Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2). These devices also show reduced roughness, intrinsic doping and chemical reactivity. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics and allows for the realization of more complex graphene heterostructures.
              Bookmark
              • Record: found
              • Abstract: found
              • Article: not found

              One-dimensional electrical contact to a two-dimensional material.

              Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.
                Bookmark

                Author and article information

                Contributors
                pkim@physics.harvard.edu
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                31 May 2022
                31 May 2022
                2022
                : 13
                : 3032
                Affiliations
                [1 ]GRID grid.38142.3c, ISNI 000000041936754X, Department of Physics, , Harvard University, ; Cambridge, MA 02138 USA
                [2 ]GRID grid.450308.a, ISNI 0000 0004 0369 268X, Université Grenoble—Alpes, CNRS, Grenoble INP, Institut NEEL, ; 38000 Grenoble, France
                [3 ]GRID grid.21941.3f, ISNI 0000 0001 0789 6880, Research Center for Functional Materials, , National Institute for Materials Science, ; 1-1 Namiki, Tsukuba, 305-0044 Japan
                [4 ]GRID grid.21941.3f, ISNI 0000 0001 0789 6880, International Center for Materials Nanoarchitectonics, , National Institute for Materials Science, ; 1-1 Namiki, Tsukuba, 305-0044 Japan
                [5 ]GRID grid.38142.3c, ISNI 000000041936754X, John A. Paulson School of Engineering and Applied Sciences, , Harvard University, ; Cambridge, MA 02138 USA
                Author information
                http://orcid.org/0000-0002-2427-2591
                http://orcid.org/0000-0003-3701-8119
                http://orcid.org/0000-0002-1467-3105
                http://orcid.org/0000-0002-8255-0086
                Article
                30732
                10.1038/s41467-022-30732-7
                9156765
                35641534
                e903a511-b1d3-4729-aa1d-1f026d91b7d9
                © The Author(s) 2022

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 22 July 2021
                : 16 May 2022
                Funding
                Funded by: FundRef https://doi.org/10.13039/100000001, National Science Foundation (NSF);
                Award ID: DMR1809188
                Award ID: QII-TAQS MPS 1936263
                Award Recipient :
                Funded by: FundRef https://doi.org/10.13039/100006133, DOE | Advanced Research Projects Agency - Energy (Advanced Research Projects Agency - Energy - U.S. Department of Energy);
                Award ID: DE-SC0019300
                Award Recipient :
                Categories
                Article
                Custom metadata
                © The Author(s) 2022

                Uncategorized
                electronic properties and materials,condensed-matter physics
                Uncategorized
                electronic properties and materials, condensed-matter physics

                Comments

                Comment on this article