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      Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

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          Journal
          IEEE Transactions on Magnetics
          IEEE Trans. Magn.
          Institute of Electrical and Electronics Engineers (IEEE)
          0018-9464
          October 2005
          October 2005
          : 41
          : 10
          : 2685-2687
          Article
          10.1109/TMAG.2005.855296
          e9751b1b-42ca-4423-b2b9-8a25c36b7f5d
          © 2005
          History

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