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      Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

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          Journal
          Title: IEEE Transactions on Magnetics
          Abbreviated Title: IEEE Trans. Magn.
          Publisher: Institute of Electrical and Electronics Engineers (IEEE)
          ISSN (Print): 0018-9464
          Publication date Created: October 2005
          Publication date (Print): October 2005
          Volume: 41
          Issue: 10
          Pages: 2685-2687
          Article
          DOI: 10.1109/TMAG.2005.855296
          SO-VID: e9751b1b-42ca-4423-b2b9-8a25c36b7f5d
          Copyright © © 2005
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