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      Qubit detection with a T-shaped double quantum dot detector

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          Abstract

          We propose to continuously monitor a charge qubit by utilizing a T-shaped double quantum dot detector, in which the qubit and double dot are arranged in such a unique way that the detector turns out to be particularly susceptible to the charge states of the qubit. Special attention is paid to the regime where acquisition of qubit information and backaction upon the measured system exhibit nontrivial correlation. The intrinsic dynamics of the qubit gives rise to dynamical blockade of tunneling events through the detector, resulting in a super-Poissonian noise. However, such a pronounced enhancement of detector's shot noise does not necessarily produce a rising dephasing rate. In contrast, an inhibition of dephasing is entailed by the reduction of information acquisition in the dynamically blockaded regimes. We further reveal the important impact of the charge fluctuations on the measurement characteristics. Noticeably, under the condition of symmetric junction capacitances the noise pedestal of circuit current is completely suppressed, leading to a divergent signal-to-noise ratio, and eventually to a violation of the Korotkov-Averin bound in quantum measurement. Our study offers the possibility for a double dot detector to reach the quantum limited effectiveness in a transparent manner.

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          Single-shot readout of an electron spin in silicon

          , , (2010)
          The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.
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            Real-time detection of electron tunnelling in a quantum dot.

            Nanostructures in which strong (Coulomb) interactions exist between electrons are predicted to exhibit temporal electronic correlations. Although there is ample experimental evidence that such correlations exist, electron dynamics in engineered nanostructures have been observed directly only on long timescales. The faster dynamics associated with electrical currents or charge fluctuations are usually inferred from direct (or quasi-direct) current measurements. Recently, interest in electron dynamics has risen, in part owing to the realization that additional information about electronic interactions can be found in the shot noise or higher statistical moments of a direct current. Furthermore, interest in quantum computation has stimulated investigation of quantum bit (qubit) readout techniques, which for many condensed-matter systems ultimately reduces to single-shot measurements of individual electronic charges. Here we report real-time observation of individual electron tunnelling events in a quantum dot using an integrated radio-frequency single-electron transistor. We use electron counting to measure directly the quantum dot's tunnelling rate and the occupational probabilities of its charge state. Our results provide evidence in favour of long (10 micros or more) inelastic scattering times in nearly isolated dots.
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              Quantum feedback control of a superconducting qubit: Persistent Rabi oscillations

              The act of measurement bridges the quantum and classical worlds by projecting a superposition of possible states into a single, albeit probabilistic, outcome. The time-scale of this "instantaneous" process can be stretched using weak measurements so that it takes the form of a gradual random walk towards a final state. Remarkably, the interim measurement record is sufficient to continuously track and steer the quantum state using feedback. We monitor the dynamics of a resonantly driven quantum two-level system -- a superconducting quantum bit --using a near-noiseless parametric amplifier. The high-fidelity measurement output is used to actively stabilize the phase of Rabi oscillations, enabling them to persist indefinitely. This new functionality shows promise for fighting decoherence and defines a path for continuous quantum error correction.
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                Author and article information

                Journal
                2015-01-03
                2015-01-15
                Article
                1501.00570
                eab3c2ad-6708-4ecf-868a-cd1b6ba2aafb

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                6 figures, typoes corrected
                cond-mat.mes-hall

                Nanophysics
                Nanophysics

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