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      Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides

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          Abstract

          We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX\(_2\) with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external electric field. We propose a novel topological field effect transistor made of these atomic layer materials and their van der Waals heterostructures. Our device exhibits parametrically enhanced charge-spin conductance through topologically protected transport channels, and can be rapidly switched off by electric field through topological phase transition instead of carrier depletion. Our work provides a practical material platform and device architecture for topological quantum electronics.

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          Author and article information

          Journal
          10 June 2014
          Article
          10.1126/science.1256815
          1406.2749

          http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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          Science 346, 1344-1347 (2014)
          22 pages, 10 figures, submitted in May 2014
          cond-mat.mes-hall cond-mat.mtrl-sci

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