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      Pulsed current-voltage electrodeposition of stoichiometric Bi 2Te 3 nanowires and their crystallographic characterization by transmission electron backscatter diffraction

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          ABSTRACT

          Bi 2Te 3 nanowires with diameters ranging from 25 to 270 nm, ultra-high aspect ratio, and uniform growth front were fabricated by electrodeposition, pulsing between zero current density during the off time and constant potential during the on time (pulsed-current-voltage method, p-IV). The use of zero current density during the off time is to ensure no electrodeposition is carried out and the system is totally relaxed. By this procedure, stoichiometric nanowires oriented perpendicular to the c-axis is obtained for the different diameters of porous alumina templates. In addition, the samples show a uniform growth front with ultra-high aspect ratio single crystal nanowires. The high degree of crystallinity was verified by transmission electron backscatter diffraction. This characterization revealed that the nanowires present both large single crystalline areas and areas with alternating twin configurations.

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          Most cited references35

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          Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

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            Recent Studies of Bismuth Telluride and Its Alloys

            H Goldsmid (1961)
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              Thermal properties of high quality single crystals of bismuth telluride—Part I: Experimental characterization

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                Author and article information

                Journal
                Sci Technol Adv Mater
                Sci Technol Adv Mater
                TSTA
                tsta20
                Science and Technology of Advanced Materials
                Taylor & Francis
                1468-6996
                1878-5514
                2019
                25 September 2019
                : 20
                : 1
                : 1022-1030
                Affiliations
                [a ]Instituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC) Isaac Newton, 8, E-28760 , Tres Cantos, Spain
                [b ]Laboratory for Mechanics of Materials and Nanostructures, Empa, Swiss Federal Laboratories for Materials Science and Technology , Thun, Switzerland
                [c ]Laboratory of Advanced Microscopy and Department of Physics Condensed Matter, University of Zaragoza , Zaragoza, Spain
                [d ]Institute of Nanoscience of Aragón-ICMA-CSIC, University of Zaragoza , Zaragoza, Spain
                Author notes
                CONTACT Marisol Martín-González Instituto de Micro yNanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC) Isaac Newton, 8, E-28760 , Tres Cantos, Spain
                Author information
                http://orcid.org/0000-0001-5708-6544
                Article
                1671778
                10.1080/14686996.2019.1671778
                6830284
                31723369
                eda25a73-58f1-4543-b21c-46bb980b897c
                © 2019 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group.

                This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

                History
                : 22 July 2019
                : 20 September 2019
                : 20 September 2019
                Page count
                Figures: 6, Tables: 3, References: 37, Pages: 9
                Categories
                Focus on Thermoelectric Materials

                pulsed electrodeposition,bismuth telluride,thermoelectric materials,nanowires,transmission electron backscatter diffraction (t-ebsd),102 porous / nanoporous / nanostructured materials,300 processing / synthesis and recycling,301 chemical syntheses / processing,302 crystallization / heat treatment / crystal growth,503 tem,stem,sem,504 x-ray / neutron diffraction and scattering

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