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      Characteristics of Al2O3/AlInN/GaN MOSHEMT

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          Small-signal characteristics of AlInN/GaN HEMTs

          N Grandjean, S. Vandenbrouck, M.A. Py … (2006)
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            High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors

            Toshiaki Matsui, Takashi Mimura, Masataka Higashiwaki (2006)
            Article 0 comments Cited 9 times – based on 0 reviews     Review now
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              Author and article information

              Journal
              Journal ID (publisher-id): ELLEAK
              Title: Electronics Letters
              Abbreviated Title: Electron. Lett.
              Publisher: Institution of Engineering and Technology (IET)
              ISSN (Print): 00135194
              Publication date Created: 2007
              Publication date (Print): 2007
              Volume: 43
              Issue: 12
              Page: 691
              Article
              DOI: 10.1049/el:20070425
              SO-VID: f1aaf31e-1e68-4a43-ae3d-c77c16d981d9
              Copyright © © 2007
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