Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals

Ebisawa, Naoki; Ohno, Yutaka; Kutsukake, Kentaro; Yonenaga, Ichiro; Deura, Momoko; Shimizu, Yasuo; Takeda, Seiji; Yoshida, Hideto; Nagai, Yasuyoshi; Inoue, Koji

doi:10.1063/1.4964440

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Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals

Author(s): Yutaka Ohno ¹ , Kentaro Kutsukake ¹ , Momoko Deura ¹ , Ichiro Yonenaga ¹ , Yasuo Shimizu ² , Naoki Ebisawa ² , Koji Inoue ² , Yasuyoshi Nagai ² , Hideto Yoshida ³ , Seiji Takeda ³

Publication date Created: October 03 2016

Publication date (Print): October 03 2016

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

Karsten Bothe, Jan Schmidt (2004)

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Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length

A. Smith, J Rand, J. P. Kalejs … (2003)

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Chemical natures and distributions of metal impurities in multicrystalline silicon materials

T. Buonassisi, A. A. Istratov, M. D. Pickett … (2006)

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Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: October 03 2016

Publication date (Print): October 03 2016

Volume: 109

Issue: 14

Page: 142105

Affiliations

[1 ]Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

[2 ]The Oarai Center, IMR, Tohoku University, Oarai, Ibaraki 311-1313, Japan

[3 ]The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

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DOI: 10.1063/1.4964440

SO-VID: f4223630-b65c-45b2-a31c-13ddbe35436d

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Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals

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Most cited references 43

Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

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