A single-trap study of PBTI in SiON nMOS transistors: Similarities and differences to the NBTI/pMOS case

Waltl, Michael; Goes, Wolfgang; Rott, Karina; Reisinger, Hans; Grasser, Tibor

doi:10.1109/IRPS.2014.6861195

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A single-trap study of PBTI in SiON nMOS transistors: Similarities and differences to the NBTI/pMOS case

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Author(s): Michael Waltl , Wolfgang Goes , Karina Rott , Hans Reisinger , Tibor Grasser

Publication date (Print): June 2014

Publisher: IEEE

Conference name: 2014 IEEE International Reliability Physics Symposium (IRPS)

Conference date: July 1, 2014 - July 5, 2014

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Publisher: IEEE

Publication date: June 2014

Publication date (Print): June 2014

Pages: XT.18.1-XT.18.5

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DOI: 10.1109/IRPS.2014.6861195

SO-VID: f92b0bce-d80a-4413-bd99-680dd7d643c5

Conference name: 2014 IEEE International Reliability Physics Symposium (IRPS)

Conference location: Waikoloa, HI, USA

Conference date: July 1, 2014 - July 5, 2014

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A single-trap study of PBTI in SiON nMOS transistors: Similarities and differences to the NBTI/pMOS case

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