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      Raman scattering in ultraheavily doped silicon

      Author(s): , , ,
      Publication date (Electronic):
      Journal: Physical Review B
      Publisher: American Physical Society (APS)

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          Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model

          P. Parayanthal, Fred Pollak (1984)
          Article 0 comments Cited 127 times – based on 0 reviews     Review now
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            Effects of As+ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation

            D. Aspnes, F. H. Pollak, P. Amirtharaj … (1984)
            Article 0 comments Cited 116 times – based on 0 reviews     Review now
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              Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon

              S Wilson, C W White, F. W. Young … (1980)
              Article 0 comments Cited 105 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): PRBMDO
                Title: Physical Review B
                Abbreviated Title: Phys. Rev. B
                Publisher: American Physical Society (APS)
                ISSN (Print): 0163-1829
                Publication date Created: October 1985
                Publication date (Electronic): October 15 1985
                Volume: 32
                Issue: 8
                Pages: 5464-5467
                Article
                DOI: 10.1103/PhysRevB.32.5464
                SO-VID: f934cf00-c84c-435f-a6e1-3e4c5608fabb
                Copyright © © 1985
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                http://link.aps.org/licenses/aps-default-license

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