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The luminescence of defects introduced by mechanical damage of InP
Author(s):
R. A. Street
,
R. H. Williams
Publication date
Created:
January 1981
Publication date
(Print):
January 1981
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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12
Record
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Experimental Proof of the Existence of a New Electronic Complex in Silicon
J. Haynes
(1960)
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Evidence for low surface recombination velocity onn‐type InP
E Buehler
,
H. C. Casey
(1977)
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Identification of the defect state associated with a gallium vacancy in GaAs and\({\mathrm{Al}}_{x}{\mathrm{Ga}}_{1-x}\mathrm{As}\)
L. Kimerling
,
R. A. Logan
,
D. V. Lang
(1977)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
January 1981
Publication date (Print):
January 1981
Volume
: 52
Issue
: 1
Pages
: 402-406
Article
DOI:
10.1063/1.328463
SO-VID:
fac8b917-f6d0-46d6-b45e-ef9ef8f90009
Copyright ©
© 1981
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