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      The luminescence of defects introduced by mechanical damage of InP

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      Journal of Applied Physics
      AIP Publishing

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          Experimental Proof of the Existence of a New Electronic Complex in Silicon

          J. Haynes (1960)
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            Evidence for low surface recombination velocity onn‐type InP

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              Identification of the defect state associated with a gallium vacancy in GaAs and\({\mathrm{Al}}_{x}{\mathrm{Ga}}_{1-x}\mathrm{As}\)

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                January 1981
                January 1981
                : 52
                : 1
                : 402-406
                Article
                10.1063/1.328463
                fac8b917-f6d0-46d6-b45e-ef9ef8f90009
                © 1981
                History

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