Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

Elbaz, Anas; Arefin, Riazul; Sakat, Emilie; Wang, Binbin; Herth, Etienne; Patriarche, Gilles; Foti, Antonino; Ossikovski, Razvigor; Sauvage, Sébastien; Checoury, Xavier; Pantzas, Konstantinos; Sagnes, Isabelle; Chrétien, Jérémie; Casiez, Lara; Bertrand, Mathieu JM; Calvo, Vincent; Pauc, Nicolas; Chelnokov, Alexei; Boucaud, Philippe; Boeuf, Frederic; Reboud, Vincent; Hartmann, Jean-Michel; El Kurdi, Moustafa

doi:10.1021/acsphotonics.0c00708

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Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

Author(s): Anas Elbaz ¹ ^, ² , Riazul Arefin ¹ , Emilie Sakat ¹ , Binbin Wang ¹ , Etienne Herth ¹ , Gilles Patriarche ¹ , Antonino Foti ³ , Razvigor Ossikovski ³ , Sebastien Sauvage ¹ , Xavier Checoury ¹ , Konstantinos Pantzas ¹ , Isabelle Sagnes ¹ , Jérémie Chrétien ⁴ , Lara Casiez ⁵ , Mathieu Bertrand ⁵ , Vincent Calvo ⁴ , Nicolas Pauc ⁴ , Alexei Chelnokov ⁵ , Philippe Boucaud ⁶ , Frederic Boeuf ² , Vincent Reboud ⁵ , Jean-Michel Hartmann ⁵ , Moustafa El Kurdi ¹

Publication date (Electronic): September 01 2020

Journal: ACS Photonics

Publisher: American Chemical Society (ACS)

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Most cited references 47

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Lasing in direct-bandgap GeSn alloy grown on Si

S Wirths, R. Geiger, N. von den Driesch … (2015)

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Achieving direct band gap in germanium through integration of Sn alloying and external strain

Krishna Saraswat, Suyog Gupta, Blanka Magyari-Köpe … (2013)

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Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

James S Harris, Yijie Huo, Theodore I Kamins … (2011)

0 comments Cited 68 times – based on 0 reviews      Review now

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Author and article information

Contributors

Emilie Sakat: (View ORCID Profile)

Antonino Foti: (View ORCID Profile)

Razvigor Ossikovski: (View ORCID Profile)

Jérémie Chrétien: (View ORCID Profile)

Moustafa El Kurdi: (View ORCID Profile)

Journal

Title: ACS Photonics

Abbreviated Title: ACS Photonics

Publisher: American Chemical Society (ACS)

ISSN (Print): 2330-4022

ISSN (Electronic): 2330-4022

Publication date Created: October 21 2020

Publication date (Electronic): September 01 2020

Publication date (Print): October 21 2020

Volume: 7

Issue: 10

Pages: 2713-2722

Affiliations

[1 ]Université Paris-Saclay, CNRS, C2N, 91120, Palaiseau, France

[2 ]STMicroelectronics, Rue Jean Monnet 38054 Crolles, France

[3 ]LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91120 Palaiseau, France

[4 ]Univ. Grenoble Alpes, CEA, IRIG-DePhy, 38054 Grenoble, France

[5 ]Univ. Grenoble Alpes, CEA, LETI, 38054 Grenoble, France

[6 ]Université Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, CS 10269, 06905 Sophia-Antipolis Cedex, France

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DOI: 10.1021/acsphotonics.0c00708

SO-VID: ff8d3430-5a4c-458e-be61-65236c142739

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Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

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Most cited references 47

Lasing in direct-bandgap GeSn alloy grown on Si

Achieving direct band gap in germanium through integration of Sn alloying and external strain

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

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