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The Blue Laser Diode
Zn and Si Co-Doped InGaN / AlGaN Double-Heterostructure Blue and Blue-Green LEDs
other
Author(s):
Shuji Nakamura
,
Gerhard Fasol
Publication date
(Print):
1997
Publisher:
Springer Berlin Heidelberg
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Journal of Green Building
Author and book information
Book Chapter
Publication date (Print):
1997
Pages
: 177-199
DOI:
10.1007/978-3-662-03462-0_9
SO-VID:
389cacfa-addd-4f62-9846-de13001a29b7
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Book chapters
pp. 1
Introduction
pp. 7
Background
pp. 21
Physics of Gallium Nitride and Related Compounds
pp. 35
GaN Growth
pp. 79
p-Type GaN Obtained by Electron Beam Irradiation
pp. 93
n-Type GaN
pp. 103
p-Type GaN
pp. 129
InGaN
pp. 177
Zn and Si Co-Doped InGaN / AlGaN Double-Heterostructure Blue and Blue-Green LEDs
pp. 201
InGaN Single-Quantum-Well LEDs
pp. 223
Room-Temperature Pulsed Operation of Laser Diodes
pp. 265
Emission Mechanisms of LEDs and LDs
pp. 277
Room Temperature CW Operation of InGaN MQW LDs
pp. 305
Latest Results: Lasers with Self-Organized InGaN Quantum Dots
pp. 313
Conclusions
pp. 317
Biographies
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