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      Defect-Mediated Lithium Adsorption and Diffusion on Monolayer Molybdenum Disulfide

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      1 , a , 1 , b , 2
      Scientific Reports
      Nature Publishing Group

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          Abstract

          Monolayer Molybdenum Disulfide (MoS 2) is a promising anode material for lithium ion batteries because of its high capacities. In this work, first principle calculations based on spin density functional theory were performed to investigate adsorption and diffusion of lithium on monolayer MoS 2 with defects, such as single- and few-atom vacancies, antisite, and grain boundary. The values of adsorption energies on the monolayer MoS 2 with the defects were increased compared to those on the pristine MoS 2. The presence of defects causes that the Li is strongly bound to the monolayer MoS 2 with adsorption energies in the range between 2.81 and 3.80 eV. The donation of Li 2 s electron to the defects causes an enhancement of adsorption of Li on the monolayer MoS 2. At the same time, the presence of defects does not apparently affect the diffusion of Li, and the energy barriers are in the range of 0.25–0.42 eV. The presence of the defects can enhance the energy storage capacity, suggesting that the monolayer MoS 2 with defects is a suitable anode material for the Li-ion batteries.

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          Anomalous Lattice Vibrations of Single and Few-Layer MoS2

          Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the 3-dimensional to the 2-dimensional regime.
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            Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition

            Large-area MoS2 atomic layers are synthesized on SiO2 substrates by chemical vapor deposition using MoO3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS2 monolayer. The TEM images verify that the synthesized MoS2 sheets are highly crystalline.
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              Exploring atomic defects in molybdenum disulphide monolayers

              Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm−2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.
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                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                22 December 2015
                2015
                : 5
                : 18712
                Affiliations
                [1 ]School of Physical Electronics, University of Electronic Science and Technology of China , Chengdu, 610054, P.R. China
                [2 ]Department of Physics and Electrical Engineering, Faculty of Engineering and Environment, University of Northumbria , Newcastle upon Tyne, NE1 8ST, UK
                Author notes
                Article
                srep18712
                10.1038/srep18712
                4686938
                26692345
                0b98706f-7caf-4e33-b0e2-7f2ea249994e
                Copyright © 2015, Macmillan Publishers Limited

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 02 October 2015
                : 23 November 2015
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