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      Defect self-annihilation in surfactant-mediated epitaxial growth.

      Author(s): , , , ,
      Publication date (Electronic):
      Journal: Physical review letters
      Publisher: American Physical Society (APS)

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          Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

          D. J. Eaglesham, M Cerullo (1990)
          Article 0 comments Cited 431 times – based on 0 reviews     Review now
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            Surfactants in epitaxial growth.

            (1989)
            Article 0 comments Cited 271 times – based on 0 reviews     Review now
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              Ion beam crystallography of surfaces and interfaces

              J.F. van der Veen (1985)
              Article 0 comments Cited 135 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (iso-abbrev): Phys. Rev. Lett.
                Title: Physical review letters
                Publisher: American Physical Society (APS)
                ISSN (Electronic): 1079-7114
                ISSN (Print): 0031-9007
                Publication date (Electronic): Aug 26 1991
                Volume: 67
                Issue: 9
                Article
                DOI: 10.1103/PhysRevLett.67.1130
                PubMed ID: 10045083
                SO-VID: f9961549-1044-483c-8955-6f14d4d22e9f
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