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      Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

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      Journal of Applied Physics
      AIP Publishing

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          ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers

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            Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I

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              Observation and analysis of the primary 29Si hyperfine structure of the E′ center in non-crystalline SiO2

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                February 1981
                February 1981
                : 52
                : 2
                : 879-884
                Article
                10.1063/1.328771
                06af8a3d-2447-487f-b8a0-ab6ab8fd599e
                © 1981
                History

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