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      Hole traps and trivalent silicon centers in metal/oxide/silicon devices

      Author(s): ,
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

          L.M. Terman (1962)
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            A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures

            F. McLean (1980)
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              Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

              Bruce Deal, Reda Razouk, Edward H. Poindexter … (1981)
              Article 0 comments Cited 174 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: May 15 1984
                Publication date (Print): May 15 1984
                Volume: 55
                Issue: 10
                Pages: 3495-3499
                Article
                DOI: 10.1063/1.332937
                SO-VID: 11bd0a4e-8bea-49dc-9adb-a8134bb3ce21
                Copyright © © 1984
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