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      • Record: found
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      Defect-enhanced annealing by carrier recombination in GaAs

      Author(s): ,
      Publication date (Electronic):
      Journal: Physical Review B
      Publisher: American Physical Society (APS)

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          Irradiation-induced defects in GaAs

          J. C. Bourgoin, D. Pons (1985)
          Article 0 comments Cited 108 times – based on 0 reviews     Review now
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            Point Defects in Semiconductors I

            Michel Lannoo, Jacques P. Bourgoin (1981)
            Book 0 comments Cited 85 times – based on 0 reviews
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              Point Defects in Semiconductors II

              Jacques C. Bourgoin, Michel Lannoo (1983)
              Book 0 comments Cited 69 times – based on 0 reviews
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                Author and article information

                Journal
                Journal ID (publisher-id): PRBMDO
                Title: Physical Review B
                Abbreviated Title: Phys. Rev. B
                Publisher: American Physical Society (APS)
                ISSN (Print): 0163-1829
                Publication date Created: June 1986
                Publication date (Electronic): June 15 1986
                Volume: 33
                Issue: 12
                Pages: 8410-8415
                Article
                DOI: 10.1103/PhysRevB.33.8410
                SO-VID: 11e349d2-be4e-41c3-a8c3-8710ab6880f5
                Copyright © © 1986
                License:

                http://link.aps.org/licenses/aps-default-license

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