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      Irradiation-induced defects inp-type GaAs

      , ,
      Physical Review B
      American Physical Society (APS)

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          Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

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            Deep-level optical spectroscopy in GaAs

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              Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                September 1986
                September 15 1986
                : 34
                : 6
                : 4048-4058
                Article
                10.1103/PhysRevB.34.4048
                c54f4486-a99e-4dd4-b0e6-874afa3cd2e0
                © 1986

                http://link.aps.org/licenses/aps-default-license

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